LXA12T600C
Silicon diode fast, balanced between the EMI performance and switching speed
- VRRM- 600 - V
- i.F (AVG)A - 3 - A - 20
- QThe RR- 21-51 nC nC
application
Product details
Qspeed diode has the lowest in all of the silicon diode QThe RRValue.Its recovery features can improve efficiency, reduce EMI and save the buffer circuit.
The product features
features
- Low QThe RRLow, IRRMAnd low tThe RR
- It can realize high dIF/ dt value (1000 a/(including s)
- Soft recovery
advantage
- To improve efficiency
- No buffer circuit
- Reduce the size and number of the EMI filter element
- An extremely fast switch
application
- Power factor correction (PFC) booster diode
- Motor drive circuit
- DC - AC inverter
The relevant information
Simulation on PowerEsim diode
Power Integrations have to establish cooperation with PowerEsim, provides a fast and accurately simulated Qspeed shortcut to product excellence performance.Please click on the following PowerEsim logo link, for details.
Product specification
| Forward current (on average) | 6.00 A |
| The forward voltage (typical) | 2.10 V |
| Reverse recovery voltage (maximum) | 600.00 V |
| IC packaging | The TO - 220 - ab |
| Installation type | Through Hole, |
| Operating temperature (minimum) | - 55 ° C |
| Operating temperature (maximum) | 150 ° c. |
| The Product Sub - Type | Diode |
