SID1102K
Maximum 5 a single channel of IGBT/MOSFET gate drive, can withstand voltage 1200 v IGBT and MOSFET provide reinforced insulation
application
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product
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Data book
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IGBT voltage grade
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Gate peak current (maximum)
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Maximum switching frequency
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Supported by the module
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Logic input voltage
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Protection function
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technology
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The interface type
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Support the topology
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The power supply voltage (typical)
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Isolation type
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Isolation technique
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Time - output decline
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Time - the output rise
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Drive mode
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Master/peripheral
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The parallel support?
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The Data Sheet
Look at the PDF
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IGBT Voltage Class
1200 V
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Gate Peak Current (Max)
+ 5 A
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Max Switching Frequency
75.0 kHz
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Supported the Module Type
IGBT, N - Channel MOSFET
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Logic Input Voltage
5
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Protection, the Features
Basic Active Clamping, Adv Soft Shutdown, Dynamic Adv Active Clamping, Short Circuit, UVLO (Sec - side), UVLO (Pri - side)
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Technology
SCALE - iDriver
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Interface Type
Electrical
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Supported bob电竞体育平台appTopologies
2 - level Voltage Source, 3 - level NP - Clamped - Type 1, 3 - level NP - Clamped - Type 2, Multi - level NP - Clamped
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Supply Voltage (Typ)
5 V
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The Isolation Type
Reinforced
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The Isolation Technology
Fluxlink
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Time - the Output Fall
14 ns
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Time - the Output Rise
29 ns
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Driving Mode
Direct - Independent
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The Main/Peripheral
N/A
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Paralleling the Support?
No
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Product details
SID1102K is to adopt the eSOP wide-body assembly of single channel MOSFET and IGBT gate driver.The device USES Power Integrations innovation of solid insulation FluxLink ™ technology has realized the reinforced insulation.Its peak output drive current of 5 a, can be directly driven 300 under a switching device.Promote level for more than 5 a gate drive, AUXGL and AUXGH output pin can drive a 60 external n-channel MOSFET.
Controller (PWM) signal is compatible with 5 v CMOS logic level, using partial pressure resistance but also can adjust the logic level to 15 v.Deputy party voltage � � principle provides a + 15 v to 10 v bipolar gate drive voltage, at the same time, need only a + 25 v unipolar voltage.Chip inside the Vee stabilizer to + 15 v gate drive voltage to adjust.Under voltage protection可关断门极信号，使IGBT或MOSFET保持安全工作。
- IGBT gate driver has a wider and more flexible application range and can drive 1200 v IGBT modules, and provide a 50-3600 - a IGBT current.
- Single channel can be used in not promote the cases of grade 5 a peak gate drive current
- On the external tube and the tube N level communication promote aux output peak drive current can be increased to 60 a
- Under voltage protection
- Integrated FluxLink technology for the original party and vice party to provide reliable insulation
- Rail-to-rail output voltage and voltage stability
- Deputy Fang Chan power supply
- Suitable for 600 v / 650 v / 1200 v IGBT and MOSFET power switch
- Switch frequency up to 75 KHZ
- Transmission delay jitter is plus or minus 5 ns
- Working environment temperature between to 40 ° C to 125 ° C
- The perturbation resistance with high common mode transient
- Using 9.5 mm clearance and creepage distance of the eSOP encapsulation
